Prof. Ian Sharp
Prof. Dr.
Ian
Sharp
Technische Universität München
Lehrstuhl für Experimentelle Halbleiterphysik (Prof. Sharp)
Postadresse
Am Coulombwall 4
85748 Garching b. München
Eine Beschreibung der faszinierenden Forschungsthemen folgt in Kürze.
Publikationen werden geladen...
Nature Communications
Abstract: Perovskite-type tantalum-based oxynitride photocatalysts are promising candidates for water splitting due to their suitable band positions and extended light absorption beyond 600 nm. However, their…
Advanced Functional Materials
Abstract: Direct solar water splitting is a promising approach for sustainably producing hydrogen, but significant materials challenges must be overcome to achieve high efficiency and long-term stability. This…
Chemical Science
Abstract: Ultrafast small-polaron formation profoundly shapes the electronic and catalytic behaviour of transition metal oxides (TMOs). Despite its significance, spectroscopic investigations of photoexcited…
Advanced Energy Materials
Abstract: TiO2 is widely applied as a photoanode material for the oxygen evolution reaction (OER), as well as for corrosion protection. However, its stability during photoelectrochemical (PEC) processes is…
Advanced Materials Interfaces
Abstract: Molybdenum oxide (MoOx) thin films have been extensively investigated for selective hole extraction in solar cells, including as an efficient alternative to the well-studied p-type a-Si:H layers in Si…
Journal of the American Chemical Society
Abstract: While DNA origami is a powerful bottom-up fabrication technique, the physical and chemical stability of DNA nanostructures is generally limited to aqueous buffer conditions. Wet chemical…
Journal of the American Chemical Society
Abstract: Chiral hybrid metal-halide perovskites show low-symmetry crystal structures, large Rashba splitting, spin-filtering, and strong chiroptical activity. Circular dichroism and circularly polarized…
Advanced Materials Interfaces
Abstract: Multinary nitrides and oxynitrides offer a range of tunable structural and optoelectronic properties. However, much of this vast compositional space remains to be explored due to the challenges…
Advanced Functional Materials
Abstract: Combining a precise sputter etching method with subsequent AlOx growth within an atomic layer deposition chamber enables the fabrication of atomically flat lateral patterns of SiO2 and AlOx. The…
ACS Applied Materials and Interfaces
Abstract: Zinc nitride (Zn3N2) comprises earth-abundant elements, possesses a small direct bandgap, and is characterized by high electron mobility. While these characteristics make the material a promising…
Wintersemester 2025/26
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Sommersemester 2026
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