Technische Universität München
Lehrstuhl für Halbleiter-Nanostrukturen und -Quantensyteme (Prof. Finley)
Am Coulombwall 4
85748 Garching b. München
Our group explores a wide range of topics related to the fundamental physics of nanostructured materials and their quantum-electronic and -photonic properties. We study the unique electronic, photonic and quantum properties of materials patterned over nanometer lengthscales and explore how sub-components can be integrated together to realise entirely new materials with emergent properties. This convergence of materials-nanotechnology, quantum electronics and photonics is strongly interdisciplinary, spanning topics across the physical sciences, as well as materials science and engineering.
Advanced Quantum Technologies
Abstract: As demonstrated experimentally by Prevedel et al., active feed-forward can render one-way quantum computation deterministic. An analogous principle applies to the scalable generation of photonic…
Physical Review Applied
Abstract: The development of deterministic single-photon sources emitting in the telecommunication bands is a key challenge for quantum communication and photonic quantum computing. Here, we investigate the…
ACS Photonics
Abstract: The potential of color centers in hexagonal boron nitride (hBN) for quantum technology applications has driven research to create emitters across a broad spectral range by using diverse techniques.…
Physica Status Solidi - Rapid Research Letters
Abstract: Controlling crystal quality during epitaxial growth is essential for the advancement of novel materials with industrial relevance. Here, we investigate the molecular beam epitaxy of 2D hexagonal…
Nano Letters
Abstract: We investigate the interaction between interlayer excitons and ferroelectric domains in hBN-encapsulated 3R-MoS2/MoSe2 heterostructures, combining photoluminescence experiments with density functional…
Advanced Quantum Technologies
Abstract: We explore the zero-phonon line of single photon emitters in helium-ion treated monolayer MoS2, which are currently understood in terms of single sulfur-site vacancies. By comparing the linewidths of…
Advanced Functional Materials
Abstract: Combining a precise sputter etching method with subsequent AlOx growth within an atomic layer deposition chamber enables the fabrication of atomically flat lateral patterns of SiO2 and AlOx. The…
Small
Abstract: A scalable epitaxy of 2D layered materials and heterostructures constitutes a crucial step in developing novel optoelectronic applications based on high-crystalline quality 2D materials. Here, the…
Nano Letters
Abstract: We investigate the confinement of neutral excitons in a one-dimensional (1D) potential engineered by proximizing hexagonal boron nitride (hBN)-encapsulated monolayer MoSe2to ferroelectric domain walls…
Physical Review B
Abstract: Spins confined in optically active quantum dot molecules (QDMs) can be used for the deterministic generation of photonic graph states with tailored entanglement structures. Their usefulness for the…
| Titel | Termine | Dauer | Art | Vortragende/r (Mitwirkende/r) |
|---|---|---|---|---|
| Experimentalphysik 2 |
|
4 | VO | |
| FOPRA-Versuch 14: Optische Absorption (AEP, KM) |
|
1 | PR | |
| FOPRA-Versuch 24: Feldeffekt-Transistor (MOSFET) (AEP, KM, QST-EX) |
|
1 | PR | |
| FOPRA-Versuch 45: Optische Eigenschaften von Halbleiter-Quantenfilmen (AEP, KM, QST-EX) |
|
1 | PR | |
| Mathematische Ergänzungen zur Experimentalphysik 2 |
|
2 | VO | |
| Offenes Tutorium zu Experimentalphysik 2 |
|
2 | UE | |
| Schottky-Seminar |
|
2 | SE | |
| Übung zu Experimentalphysik 2 |
|
2 | UE |